| 摘要 |
PURPOSE:To provide a method of suitably executing a resist treatment by preventing a resist film from being damaged by irradiation with an ultraviolet ray and transmittivity of this ray from reducing due to deposits of the resist volatilized by this irradiation on an ultraviolet ray-permeable window. CONSTITUTION:A patterned resist 4 is formed on a semiconductor wafer 5 laid on a wafer treating table 6. A treating chamber 7 is evacuated through an exhaust hole 12 to provide a low pressure atmosphere therein. An irradiator is composed of a high pressure mercury lamp 1, concave mirror 2, openable shutter 3, etc., whereby a radiant light contg. an ultraviolet ray is irradiated on the resist 4. Air or inert gas injected through a gas injection hole 13 flows out from a porous plate 14 to thereby prevent volatilized part of the resist from depositing on an irradiation window 8. |
