| 摘要 |
PURPOSE: To guarantee superb electrical insulation and an excellent groove filling even in the case of a narrow groove, by providing a narrow groove at both sides of the active region of a semiconductor device, and filling it with an insulation material. CONSTITUTION: A narrow groove 7 in 0.4μm order is provided at both sides of an active region 6 in a substrate 1. Then, an insulation deposition containing a layer 9 of a first insulation oxide called 'smoothing' being provided between two layers 8 and 9 of a second insulation oxide called 'same shape' is formed on a predetermined region 6 in the groove 7 and also on the substrate. In this manner, by using flattening oxides 8 and 10 on the first oxide layer 9 in a same shape, an insulation material can be completely filled into a groove with a small width that is in the order of 0.4μm or is smaller and has a P/L ratio close to 1, thus achieving improved isolation.
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