发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
摘要 |
PURPOSE:To prevent recesses from occurring in a buried wiring layer or a buried bonding pad when a conductive film is buried in a groove through a polishing method so as to protect the conductive film against disconnection. CONSTITUTION:Grooves are cut in an insulating film 15 provided onto a silicon semiconductor substrate 1 corresponding to a conductive pattern 16 so as to enable a non-conductive region 8 to be located inside the buried conductive pattern 16, a conductive film is deposited on all the surface including the grooves, and then the conductive film is removed off excluding the grooves through a polishing method for the formation of the buried conductive pattern 16.
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申请公布号 |
JPH0845933(A) |
申请公布日期 |
1996.02.16 |
申请号 |
JP19940181014 |
申请日期 |
1994.08.02 |
申请人 |
FUJITSU LTD |
发明人 |
KISHII SADAHIRO;HOSHINO MASATAKA;MISAWA NOBUHIRO;OKURA YOSHIYUKI;HARADA HIDEKI;KONNO YASUHIKO;IMAI MASAHIKO |
分类号 |
H01L21/3205;H01L21/304;H01L21/316;H01L21/318;H01L21/60;H01L23/52;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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