| 摘要 |
PURPOSE:To provide the manufacturing method of a mask ROM which facilitates the reduction of steps after an ion implantation step. CONSTITUTION:In order to reduce the steps after an ion implantation step which is indispensable to the manufacture of a mask ROM as possible, a stopper layer 62 is provided on a semiconductor memory and a mask ROM gate electrode 56 and, further, an interlayer insulating film 65 which covers the stopper layer 62 is patterned to form windows 68. Ions are implanted through the windows 68. With this constitution, steps after the step in which the requests of a customer are introduced can be substantially reduced. |
