发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To reduce the power noise at the time of reading data and to prevent malfunction. CONSTITUTION:At the time of reading data, a current flowing through the memory cells 11 is converted into a voltage by a load circuit 13. A potential VD is applied to input ends of one side of plural differential amplifiers 14, 14a-1 to 14a-n, 14A-1 to 14A-n and respectively different potentials VR0, VRa1 to VRan, VRA1 to VRAn are applied to input ends of another side of plural differential amplifiers. Compared results of respective differential amplifiers are inputted to prescribed output circuits 22, 22-1 to 22-n. Respective output circuits have output buffers and control circuits thereof. The driving power of the output buffer (main buffer) of the output circuit 22 is larger than driving powers of output buffers (sub-buffers) of the other output circuits.</p>
申请公布号 JPH0845295(A) 申请公布日期 1996.02.16
申请号 JP19940176730 申请日期 1994.07.28
申请人 TOSHIBA MICROELECTRON CORP;TOSHIBA CORP 发明人 TAKIZAWA MAKOTO
分类号 G11C17/00;G11C16/06;G11C17/18;(IPC1-7):G11C17/18 主分类号 G11C17/00
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