| 摘要 |
PURPOSE: To shift a wavelength in a semiconductor structure with a quantum well by inducing mutual diffusion by the layer of a dielectric material that is maintained in a condensed state while being in contact with the upper surface of the semiconductor structure. CONSTITUTION: A layer 18 of a dielectric material is deposited on an upper surface 4 of a departure structure 1. The dielectric material is composed of, for example, indium. A sealing layer 20 for preventing leakage that can withstand a mutual diffusion temperature is deposited on the dielectric material layer 18. Finally, the departure structure is heated at 600-700 deg.C. The sealing layer 20 prevents the dielectric material from being evaporated at this temperature and also prevents leakage and oxidation, thus avoiding the defect of a step for including the structure in a sealed ampoule. A structure protected by the sealing layer is annealed for several times, thus obtaining the wavelength shift of a desired value accurately. It is understood actually that the shift linearly changes as a function of total continuation time of annealing operation to be executed at a mutual diffusion temperature. Indium is formed by a uniformly thick layer. |
