发明名称 Integrated circuit transconductor for high frequency operation
摘要 The transconductor includes a differential pair of FETs (TPA,TPB) with gates (01,02) defining the input. The drains (03,04) are connected through load circuits to the supply (Vdd) and define the output. The connection to earth is through a regulatory transistor (TA5) which receives a control voltage (Vcm). An auxiliary stage consists of two transistors with sources connected to a gain control FET and gates connected to the drains of the differential pair. The conductance of the auxiliary stage is negative and is chosen as a function of the conductance of the principal transconductor. An auxiliary transconductor includes a cut-off frequency regulator with an adjustable transconductance and phase.
申请公布号 FR2723670(A1) 申请公布日期 1996.02.16
申请号 FR19940009857 申请日期 1994.08.09
申请人 MIXED SILICON STUCTURES 发明人 HEMBERT SERGE;MOUGHABGHAB RAED
分类号 H03H11/04;(IPC1-7):H03H11/50 主分类号 H03H11/04
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