发明名称 |
COUNTER-IMPLANTATION METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED ANTI-PUNCHTHROUGH POCKETS |
摘要 |
A method of processing a semiconductor device shapes a layer buried within a substrate of the semiconductor device. This layer has a conductivity the same as that of the substrate but has a higher doping level. In this process, a region of the layer is selected and ions of an opposite conductivity to the selected layer are counter-implanted in the region so that the doping level is substantially canceled. A region of the layer adjacent to the counter-implanted region retains a higher doping level. Alternative techniques are employed to protect the doped region against the counter-implant. In a first approach, the layer is doped and subsequently a mask is formed on the surface of the substrate. The mask is furnished by a part of the semiconductor device, such as a spacer which is connected to the gate electrode after the dopant layer is formed in the substrate. After the mask is formed, ions are counter-implanted with the mask protecting the doped region. In a second approach, both the ion implant forming the doped layer and the counter-implant are performed after masking structures are formed, however the ion implant is a large-angle implant which implants ions beneath the masking structure while the counter-implant is a perpendicular implant so that regions beneath the masking structure are protected from cancellation. |
申请公布号 |
WO9604679(A1) |
申请公布日期 |
1996.02.15 |
申请号 |
WO1995US09510 |
申请日期 |
1995.07.28 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KAO, DAH-BIN;SCOTT, GREGORY, S. |
分类号 |
H01L21/336;H01L29/10;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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