| 摘要 |
<p>An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer (24). The system includes a semiconductor wafer emissivity compensation station (10) for measuring the reflectivity of the wafer (24) at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe (13) which is optically coupled to a semiconductor process chamber (12). The probe (13) senses wafer self-emission using one or more optical detectors (40) and a light modulator (42). A background temperature determining mechanism (44) independently senses the temperature of a source (46) of background radiation. Finally, a mechanism (16) calculates the temperature of the semiconductor wafer based on reflectivity and self-emission of the wafer and background temperature.</p> |
