ELECTRICALLY RESISTIVE STRUCTURE

摘要

An electrically resistive structure comprising a substrate (11) which is provided on at least one side with a first resistive film (13) and a second resistive film (17), the materials of these first and second films (13, 17) being mutually different, whereby an anti-diffusion film (15) is disposed between the first and second films (13, 17). The presence of such an anti-diffusion film (15) allows annealing of the resistive structure without significant degradation of its resistive properties. Suitable alloy materials for use in such an anti-diffusion film (15) include WTi, and particularly WTiN. Appropriate exemplary materials for the first resistive film (13) and second resistive film (17) include SiCr and CuNi alloys, respectively.