| 摘要 |
<p>A field emitter and fabrication method therefore is described in which the gate is formed around and substantially encloses the emitter. The emitter is formed on a silicon substrate and is in the form of a pyramidal structure (4). The surface of the pyramid (4) has formed thereon an oxide layer (6). On to the oxide layer (6) is formed a metal layer (8) and on to the metal layer (8) a layer of photoresist (10) is deposited. The whole device is baked until the photoresist (10) is drawn, by surface tension, towards the base of the pyramid to expose the metal layer (8). Etching of the metal layer (8) and the oxide layer (6) produces the finished device which may suitably be employed as a switch in an electronic circuit.</p> |
