| 摘要 |
This disclosure is directed to a method of producing a smooth surface for a dielectric coating (34) that is located above the surface of semiconductor substrate (10) containing doped regions (26, 32, 34) of a semiconductor device. Sharp edges (40, 42) formed in the dielectric coating (34) during certain semiconductor processing steps are removed using a deposition process to deposit a separate insulating layer (48) on the dielectric coating (34) containing the sharp edges (40, 42) followed by an annealing operation and the subsequent removal of the separate insulating layer (48) to permit the subsequent formation of electrodes (50, 52, 54) on a smooth surface of the dielectric coating (34).
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