Method for manufacturing a capacitor structure of a semiconductor memory device

摘要

A method for manufacturing a capacitor structure of a highly integrated semiconductor memory device. A first conductive layer is formed on a semiconductor substrate, and a first pattern is formed on the first conductive layer. A first material layer is formed on the resultant structure whereon the first pattern is formed, and the first material layer is etched anisotropically, to thereby form a spacer on the side of the first pattern. After etching the first conductive layer using the spacer as an etch-mask, the first pattern is removed. A second conductive layer is formed on the resultant structure and etched anisotropically. The spacer is removed, to thereby form a storage electrode of a capacitor. The distance between neighboring capacitors can be minimized to a value smaller than the limitation imposed by the lithographic technique, to thereby maximize the area of the capacitor.