| 摘要 |
A method for the construction of a highly integrated semiconductor connecting device. In the semiconductor connecting device, a plurality of third conductive lines are connected with a plurality of first conductive lines formed in the active regions of a semiconductor substrate through contact holes formed on the active regions, passing by and being insulated with a plurality of second conductive lines which are intercalated between a first interlayer insulating film and a second interlayer film and which are formed above a plurality of device separation insulating films formed in the semiconductor substrate. With the method, a stepped part is avoided thereby eliminating a cause of a the short circuit caused by remnant conductive material. In addition, the charge storage electrodes are connected with the source electrodes, while being securely disconnected from the bit lines. Furthermore, the contact area in the inventive connecting device is remarkably diminished, as compared with that in the conventional ones. Consequently, a connecting device can be constructed with high integration degree and improved reliability.
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