发明名称 METHOD OF MANUFACTURING PHASE SHIFT MASK
摘要 The method for manufacturing a mask being used in light exposure process, comprises the steps of: (i) forming a phase shift layer on a transparent substrate; (ii) defining a main pattern region by forming an interlayer insulation film on the phase shift layer and photoetching the interlayer insulation film; (iii) forming an irregularity layer on entire surface of the phase shift layer; and (iv) forming a supplement pattern region having a number of projections by etching the phase shift layer using the irregularity layer as mask.
申请公布号 KR960002238(B1) 申请公布日期 1996.02.13
申请号 KR19920024101 申请日期 1992.12.14
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 CHON, YOUNG - KWON
分类号 G03F1/26;(IPC1-7):G03F1/14 主分类号 G03F1/26
代理机构 代理人
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