发明名称 |
METHOD OF MANUFACTURING PHASE SHIFT MASK |
摘要 |
The method for manufacturing a mask being used in light exposure process, comprises the steps of: (i) forming a phase shift layer on a transparent substrate; (ii) defining a main pattern region by forming an interlayer insulation film on the phase shift layer and photoetching the interlayer insulation film; (iii) forming an irregularity layer on entire surface of the phase shift layer; and (iv) forming a supplement pattern region having a number of projections by etching the phase shift layer using the irregularity layer as mask. |
申请公布号 |
KR960002238(B1) |
申请公布日期 |
1996.02.13 |
申请号 |
KR19920024101 |
申请日期 |
1992.12.14 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
CHON, YOUNG - KWON |
分类号 |
G03F1/26;(IPC1-7):G03F1/14 |
主分类号 |
G03F1/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|