| 发明名称 |
Method for growing a compound semiconductor and a method for producing a semiconductor laser |
| 摘要 |
A method for growing a compound semiconductor layer of AlxGa1-xAs (0</=x</=1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the AlxGa1-xAs (0</=x</=1) layer on the upper surface of the substrate.
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| 申请公布号 |
US5491106(A) |
申请公布日期 |
1996.02.13 |
| 申请号 |
US19930097316 |
申请日期 |
1993.07.23 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SEKI, AKINORI;HOSOBA, HIROYUKI;HATA, TOSHIO;KONDO, MASAFUMI;SUYAMA, TAKAHIRO;MATSUI, SADAYOSHI |
| 分类号 |
H01L21/20;H01L21/203;H01S5/00;H01S5/223;H01S5/323;(IPC1-7):H01L21/20;H01L21/302 |
主分类号 |
H01L21/20 |
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