Apparatus for evaluating characteristics of semiconductor device and method of evaluating characteristics of semiconductor device using the same

摘要

A probe is attached to a support plate vertically to the surface of the support plate. A drop of a molten metal is formed at a tip portion of the probe. The support plate has a heater for setting the temperature of the probe and the drop of the molten metal at the tip portion of the probe. The probe is situated at a position corresponding to a position of an electrode of an LSI. The probe is connected to a measuring device for evaluating characteristics of the LSI by wiring. The drop of the molten metal connects the probe and the electrode of the LSI electrically.