Czochralsky-Verfahren unter Verwendung eines Bauelementes zum Abschirmen der Strahlung der Rohmaterial-Schmelzlösung und Vorrichtung hierfür.

摘要

A Czochralski method using radiation intercepting members 1, 9 is applied to manufacture a single crystal such as compound semiconductors with high production yield from a material having a low thermal conductivity or with small temperature gradient. In this method, a coracle 6 having an opening is provided in a raw material molten solution contained in a crucible 3. A first member 1 is, then, provided on the coracle 6 to intercept a radiation from the raw material molten solution. A second member 9 supported by a crystal pulling shaft 8 is, then, provided on the first member 1 to cover a opening formed at the center of the first member 1. Seeding is, then, performed, intercepting the radiation with the first and the second member. After the seeding, a shoulder portion of a single crystal is formed intercepting the radiation with the members 1, 9. A cylindrical body of the single crystal is, then, pulled by the shaft 8 together with the members 1, 9.