Method of making a wiring and a contact structure of a semiconductor device

摘要

In a wiring and contact structure of a semiconductor device, a contact hole is formed to pass through an interlayer insulating film (5) and a gate oxide film (3), and the contact hole is filled with a conductive material layer (8) which projects from the interlayer insulating film (5). A first wiring layer (10) is formed on the conductive material layer (8) so as to partially overlap the contact hole, and an first insulating film (9) is formed between the conductive material layer (8) and the first wiring layer (10). A second insulating film (11) having the same pattern as that of the first wiring layer (10) is formed on the first wiring layer (10), and a third insulating film (13) is formed as a side wall covering a side surface of the first wiring layer (10). A second wiring layer (14) is formed on the conductive material layer (8) and the first wiring layer (10) in such a manner that the second wiring layer (14) is in contact with the conductive material layer (8) and partially overlaps the first wiring layer (10) but is electrically insulated from the first wiring layer (10) by the second and third insulating films (11 and 13). <MATH>