Structure, utilization and arrangement of a semiconductor laser

摘要

The laser structure has a substrate (1) supporting an active laser layer (2) with a given refractive index sandwiched between upper and lower light conducting layer (7,7') with a different refractive index. Pref. the light is laterally confined within the light conducting layers by strips (8,8') with a lower refractive index, which extend between the upper and lower light conducting layers. Pref. a mantle layer (9) is provided above the upper light conducting layer and/or a below the lower light conducting layer in the area between the strips.