| 摘要 |
A photo mask used for manufacturing a semiconductor device which can form a photoresist pattern (4) of the same width as the chrome pattern (1) of the photo mask has dummy patterns (2) of a certain width (C) chrome spaced a certain distance (B) from both sides of an isolated region of the chrome pattern, which prevents variation in width of the photoresist pattern formed on a wafer caused by the proximity effect caused by a difference in light amount at the time of exposure. Preferably the distance (B) is 0.3 to 0.8 microns and the width (C) is 0.05 to 0.2 microns. <IMAGE>
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