| 摘要 |
<p>PURPOSE:To eliminate voltage variation of the threshold value of a TFT and to prevent the generation of a defect by short-circuiting a picture element electrode to a 1st electrode line before the formation of a protection film and opening the electrode after the protection film formation. CONSTITUTION:All source electrode lines 7a and all gate electrode lines 1 are short-circuited by short-circuit rings before the protection film 12 is formed by a plasma CVD method. Further, the picture element electrode 8 is short- circuited to the source electrode line 7a through a projection part 9 and then opened and separated electrically after the protection film 12 is formed on the entire surface by the CVD method. Consequently, all the source electrode lines 7a and picture element electrode 8 are prevented from being charged up during the CVD, the variation in the threshold voltage of the TFT is prevented, and a spot defect in a display is eliminated.</p> |
