发明名称 |
ACTIVE MATRIX SUBSTRATE AND ITS PRODUCTION |
摘要 |
<p>PURPOSE:To decrease photoresist stages. CONSTITUTION:Transparent conductive films 2 and first metallic films 3 are formed on a magnetic glass substrate 1 and are patterned to form gate electrodes 4 and pixel electrodes 5. A gate insulating film 6 and a non-doped a-Si film 7 are formed and this Si film 7 is patterned to an island form. A channel protective film 8 is formed and the channel protective film 8 on the electrode taking out regions of the Si film 7 are selectively removed. The gate insulating film 6 on pixel electrodes 5 and peripheral contact parts 9 are removed. An n<+> type a-Si film 10 and a second metallic film 11 are formed and are patterned to form drain electrodes 12 and source electrodes 13. A passivation film 15 is formed and is patterned.</p> |
申请公布号 |
JPH0836192(A) |
申请公布日期 |
1996.02.06 |
申请号 |
JP19940190189 |
申请日期 |
1994.07.21 |
申请人 |
NEC CORP |
发明人 |
SAKAMOTO MICHIAKI;OI SUSUMU |
分类号 |
G02F1/136;G02F1/1343;G02F1/1368;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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