发明名称 ACTIVE MATRIX SUBSTRATE AND ITS PRODUCTION
摘要 <p>PURPOSE:To decrease photoresist stages. CONSTITUTION:Transparent conductive films 2 and first metallic films 3 are formed on a magnetic glass substrate 1 and are patterned to form gate electrodes 4 and pixel electrodes 5. A gate insulating film 6 and a non-doped a-Si film 7 are formed and this Si film 7 is patterned to an island form. A channel protective film 8 is formed and the channel protective film 8 on the electrode taking out regions of the Si film 7 are selectively removed. The gate insulating film 6 on pixel electrodes 5 and peripheral contact parts 9 are removed. An n<+> type a-Si film 10 and a second metallic film 11 are formed and are patterned to form drain electrodes 12 and source electrodes 13. A passivation film 15 is formed and is patterned.</p>
申请公布号 JPH0836192(A) 申请公布日期 1996.02.06
申请号 JP19940190189 申请日期 1994.07.21
申请人 NEC CORP 发明人 SAKAMOTO MICHIAKI;OI SUSUMU
分类号 G02F1/136;G02F1/1343;G02F1/1368;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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