| 摘要 |
PURPOSE:To obtain a static memory cell that is excellent in stability in low- voltage operation, and that enables increasing of bit line pitch. CONSTITUTION:In a split word line type SRAM cell, driver transistors DT1, DT2 to be placed between word lines WL1, WL2, are so positioned that their gate electrodes and active regions will be orthogonal to each other and the transistors be parallel with each other in opposite directions, and that the transistors will be slanted relative to the word lines WL1, WL2. In addition, access transistors AT1, AT2 are so positioned that their active regions will diagonally intersect with the word lines WL1, WL2. This increases the length of the cell in the directions of the word lines, and reduces the intervals between the word lines WL1, WL2, which shrinks the cell in the direction of bit lines. Therefore, it is possible to increase the intervals between bit lines and further maintain the same memory cell area and stability in low-voltage operation as conventional ones. |
