发明名称 READ DEVICE OF MEMORY ARRAY CELL
摘要 <p>PURPOSE: To provide equal current paths with a compact structure, and exhibit the possibility of switching one or more current paths. CONSTITUTION: A current path of an array branch 21 is constituted of a load transistor 27, and current paths 32a, 33a of a reference branch 22 are constituted of load transistors 32, 33. The load transistor 32 is connected with a diode, and the load transistor 33 is switchable by a switching network (35-50) connected to a gate terminal of the load transistor 33.</p>
申请公布号 JPH0836884(A) 申请公布日期 1996.02.06
申请号 JP19950062793 申请日期 1995.03.22
申请人 SGS THOMSON MICROELETTRONICA SPA 发明人 KARURA MARIA GOTSURA;MARUKO ORIBUO;SHIRUBUIA PADOAN
分类号 G11C11/409;G11C7/00;G11C7/14;G11C16/06;G11C16/28;(IPC1-7):G11C11/409 主分类号 G11C11/409
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