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发明名称
PREPARATION METHOD FOR GaN SINGLE CRYSTALLINE THIN FILM USING NITRIDATION PROCESS OF GaAs
摘要
申请公布号
KR1019960001927(B1)
申请公布日期
1996.02.06
申请号
KR1019920023352
申请日期
1992.12.04
申请人
发明人
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