发明名称 |
PHOTOMASK, ITS PRODUCTION AND PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE PHOTOMASK |
摘要 |
<p>PURPOSE:To improve the transfer accuracy of a phase-shifting photomask. CONSTITUTION:A deviation checking pattern 5 consisting of a first pattern 5a made of the same material as a light-shielding pattern and a second pattern 5b formed with the same material as a phase-shifting pattern is arranged in the vicinity of the actual pattern region of a glass substrate. The space (DELTAs) between the first pattern 5a and the second pattern 5b is made smaller than the resolution of an exposure light, and the pattern of the space between the first pattern 5a and the second pattern 5b is not transferred on a semiconductor wafer.</p> |
申请公布号 |
JPH0836255(A) |
申请公布日期 |
1996.02.06 |
申请号 |
JP19940172587 |
申请日期 |
1994.07.25 |
申请人 |
HITACHI LTD |
发明人 |
KAMIBAYASHI TATSUHIKO;GYODA KAZUHIRO |
分类号 |
G03F1/30;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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