发明名称 DATA INPUT/OUTPUT LINE SENSING CIRCUIT OF SEMICONDUCTOR INTEGRATE
摘要 The circuit comprises a differential amplifier connected to one pair of differential data input/output lines and having first and second differential amplifier output lines. The differential amplifier amplifying the data read from a memory cell provides the amplified data to the first and second. differential amplifier output lines in response to an activation state of a sensing control signal. A precharge circuit is incorporated to precharge the first and second differential amplifier output lines of the differential amplifier to a set precharge voltage level in response to a non-activation state of the sensing control signal. A latch sense circuit has first not-enabled state and second enable-activated state. The latch sense circuit comprises first and second input nodes connected respectively to the first and second differential amplifier output lines.
申请公布号 KR960001860(B1) 申请公布日期 1996.02.06
申请号 KR19930010143 申请日期 1993.06.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JONG - HOON
分类号 G11C11/419;G11C7/10;G11C11/407;G11C11/409;G11C11/413;H03K3/356;(IPC1-7):G11C11/407 主分类号 G11C11/419
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