发明名称 |
DATA INPUT/OUTPUT LINE SENSING CIRCUIT OF SEMICONDUCTOR INTEGRATE |
摘要 |
The circuit comprises a differential amplifier connected to one pair of differential data input/output lines and having first and second differential amplifier output lines. The differential amplifier amplifying the data read from a memory cell provides the amplified data to the first and second. differential amplifier output lines in response to an activation state of a sensing control signal. A precharge circuit is incorporated to precharge the first and second differential amplifier output lines of the differential amplifier to a set precharge voltage level in response to a non-activation state of the sensing control signal. A latch sense circuit has first not-enabled state and second enable-activated state. The latch sense circuit comprises first and second input nodes connected respectively to the first and second differential amplifier output lines.
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申请公布号 |
KR960001860(B1) |
申请公布日期 |
1996.02.06 |
申请号 |
KR19930010143 |
申请日期 |
1993.06.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JONG - HOON |
分类号 |
G11C11/419;G11C7/10;G11C11/407;G11C11/409;G11C11/413;H03K3/356;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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