| 摘要 |
PURPOSE:To form a thinner interlayer insulation film and decrease the height of a step of a device by positioning the surface of a first wiring layer on the same level as or less than the surface of the interlayer insulation layer. CONSTITUTION:An interlayer insulation film 23 is provided over a semiconductor substrate 13 to cover a gate electrode 1, and a first contact hole 10 is provided in it to expose the surface of one side 15a of a source/drain layer. In the first contact hole 10, a buried wiring layer 4 is formed in contact with the one side 15a of the source/drain layer. The surface of the buried bit wiring layer 4 is so positioned on the same level as the surface of the interlayer insulation film 23 or below the interlayer insulation film 23. To expose the surface of the other side 15b of the source/drain layer, a second contact hole 9 is provided in the interlayer insulation film 23 and a storage node wiring 6 is provided over the interlayer insulation film 23 so that it can run through the second contact hole 9 and connect to the other side 15b of the source/drain layer. |
