| 摘要 |
<p>PURPOSE:To provide a synthetic quartz mask substrate for ArF excimer laser lithography having excellent stability to the irradiation of an ArF excimer laser and manufacture thereof. CONSTITUTION:The synthetic quartz mask substrate for excimer laser lithography has hydrogen molecule content of 0.5-4X10<18> molecules/cm<3> and contains no chlorine, has OH group content of 700-1000ppm and is free of unidirectional stria, has absorbance of K<=0.008cm<-1> at a time when an ArF excimer laser having low energy is applied, and has the quantity of the deviation of a refractive index of DELTAn<=1X10<-6> at a time when an ArF laser having high energy is applied. The manufacture is produced from synthetic quartz glass manufactured from silica fine particles obtained by flame-hydrolyzing alkoxy silane in the oxyhydrogen flame burner of a quintuple tube.</p> |
