| 摘要 |
PURPOSE:To stably operate a semiconductor device even at a low voltage by making the length nearly equal where a low-resistance region is under a wiring and that where a deep source/drain region in DDD structure is under a gate electrode. CONSTITUTION:A wiring 2 directly formed on the surface of a semiconductor substrate 1 is electrically connected to low-resistance regions 3 and 7 formed adjacent to the wiring 2 by doping an impurity, where the low-resistance region 7 is formed in the same process as the source/drain region in double diffusion drain (DDD) structure formed in the same substrate l. Namely, the length where the low-resistance region 7 is under the wiring 2 is made nearly equal to that where a deep source/drain region in DDD structure is under a gate electrode. Therefore, the impurity in the low-resistance region 7 deeply diffuses and at the same time goes deeply under the wiring 2, thus increasing the contact area between the wiring 2 and the low resistance 7 and hence reducing connection resistance. |
