| 摘要 |
PURPOSE:To obtain a thin insulation film with uniform thickness by exposing a substrate to a gas containing nitrogen in a state where the surface of non- single-crystal silicon film is kept at a specified oxygen concentration and raising the temperature of the substrate to a temperature for crystalizing amorphous silicon so that a non-single-crystal silicon film may be formed onto a silicon nitride film. CONSTITUTION:The formation method consists of an accumulation step for accumulating a non-single-crystal silicon film on a substrate 11 and a nitriding step where the substrate is exposed to a gas containing a nitrogen in a state where the surface of the non-single-crystal silicon film is kept at an oxygen concentration of less than 1X10<15>atm/cm<2> and a temperature is raised until an amorphous silicon is crystalized, and a silicon nitride film 19 is formed thereby. Then, in the non-single-crystal silicon film deposited uniformly on the substrate 11, the amorphous silicon mixed therein is crystalized and nitrided by raising the temperature, so that a uniform silicon nitride film 19 is formed, resulting in a thin insulation film with uniform film thickness. |
