| 摘要 |
PURPOSE:To provide a reflection electron diffraction method which can quantitatively analyze the crystal structure of the very small region of a crystal sample surface layer from the measurement of a rocking curve. CONSTITUTION:Electron beams 10 emitted from an electron gun 1 are converged to 100nm or less and are applied to the surface of a sample 2 and the intensity of reflected and diffracted electron rays 11 is detected by a detector 3. At this time, a probe 20 is provided closer to the surface of the sample 2 and an electric field is generated between the probe 20 and the sample 2 by applying a voltage from a voltage generation circuit 202 for changing the incidence angle of the incident electron beams 10, at the same time, the intensity of the reflection electron diffraction rays 11 is measured and the rocking curve of the reflection electron diffraction is obtained by a rocking curve measurement circuit 106, thus analyzing the crystal structure of a very small region on the sample 2. |
