| 摘要 |
PURPOSE:To obtain an amorphous semiconductor layer, which is used as the photoactive layer of a photovoltaic element and can obtain stable power generation characteristics, and the photovoltaic element, which uses the amorphous semiconductor layer as its photoactive layer. CONSTITUTION:A photovoltaic element has a defect recovery rate, at which the defect density of defects, generated by photoinadiation of 500mW/cm<2> or higher for five hours or longer, is reduced to 20% or lower by photoinadiation of 100mW/cm<2> for one hour. |
