METHOD OF MAKING TRANSISTOR

摘要

depositing a pad oxide layer and a nitride layer sequentially, patterning a photoresist layer, and removing the photoresist layer by etching the nitride and the pad oxide layers; of forming a spacer oxide layer on the side-wall of the etched nitride layer; implanting impurities to control the threshold voltage of transistor; depositing a gate oxide layer and a polysilicon layer sequentially and forming a gate electrode by etching back; and forming a source and a drain electrodes.