| 摘要 |
PURPOSE:To provide a ferroelectric storage element for obtaining improved element characteristics such as MFSMIS-FET structure, a low-voltage drive, and a feature where the insulation breakdown of a gate insulation film such as silicon oxide film cannot occur easily. CONSTITUTION:In a ferroelectric storage element which is constituted of a semiconductor substrate 1 made of p-type or n-type silicon, impurity regions 3 and 3' formed on the surface of the substrate 1, a dielectric film 2 formed on the substrate between the impurity regions 3 and 3', a lower electrode 4 formed on it, a ferroelectric film 5 formed on it, and an upper electrode 6 formed on it, ferroelectric film containing fluoride as the ferroelectric film 5 is used and platinum film is used as the lower electrode. |
