| 摘要 |
PURPOSE:To obtain a semiconductor device, and a manufacturing method thereof, in which the inner leads can be bonded collectively to a plurality of electrodes with high electrical and mechanical bonding strength. CONSTITUTION:A semiconductor chip 1 is applied, on the surface thereof, with an insulating coating 2a which is rendered conductive upon heating. An inner lead 4a is extended from a lead frame 4 while covering the top face of an electrode 2 and then the inner lead is subjected, at the forward end thereof, to anode coupling with the insulating coating 2a. Consequently, the inner lead 4 a is brought into pressure contact with the electrode 2 and coupled electrically therewith. |
