| 摘要 |
<p>PURPOSE:To provide a half-tone type phase shift mask capable of making the size of a pattern to be formed at a resist constant regardless of the position at which each light transmission area has been formed. CONSTITUTION:A half-tone type phase shift mask is made of the light transmission area group composed of a half light shield layer 14 and plural light transmission areas 12A to 12C formed on a transparent board 10, and the phase of light passing the half light shield layer 14 differs from that of light passing the light transmission area 12A to 12C. And, as the diffraction lights passing the neighboring light transmission areas interfere with each other, the light transmission areas 12A to 12C of the light transmission area group are arranged more closely, and the size of each of the light transmission areas 12B and 12C positioned on the most outer circumference of the light transmission area group differs from that of the light transmission area 12A positioned in another area of the light transmission area group.</p> |
