| 摘要 |
<p>PURPOSE:To equalize the conditions of heat dissipation in the whole region of a wafer approximately by increasing the contact areas of the wafer and a holder in a peripheral region by densely arranging the projecting sections of the peripheral region and easily dissipating heat even in the peripheral region. CONSTITUTION:Projecting sections 10a-10f are used as contacting regions when a wafer 6 is placed on a holder 5. The spaces of the projecting sections 10a-10c are formed in size narrower than those of projecting sections 10d-10f in the internal region of the holder 5. Consequently, areas per units brought into contact with the wafer 6 are made larger than the internal region in the peripheral region of the holder 5. Irradiation energy applied onto the peripheral region of the wafer 6 is also transmitted over the holder 5, thus inhibiting unequal thermal expansion generated in the peripheral region of the wafer 6.</p> |
