| 摘要 |
<p>PURPOSE:To prevent the generation of interlaminar short circuit defect and the lowering of opening ratio of picture element. CONSTITUTION:A gate electrode 2 is formed from Cr, an auxiliary capacitance electrode 3 is formed from ITO and anodic oxide films 11, 12 composed of Al-Ti-Ox is formed on each surface. In this case, the anodic oxide films 11, 12 functions as gate insulating films and prevent the generation of the interlaminar short circuit defect. Moreover, since the auxiliary capacitance electrode 3 is formed form ITO of a transparent conductive material and is covered with the anodic oxide film 12 composed of the transparent Al-Ti-Ox, the lowering of opening ratio of picture element is prevented.</p> |
