| 摘要 |
PURPOSE:To reduce the areas of a first electrode for a p-layer and second electrode for an n-layer and improve the luminous intensity of a light emitting element by forming the electrodes in very small areas at corners on the surface of the p-layer and forming lead wires to the electrodes by wedge bonding. CONSTITUTION:N-type layers 3 and 4, a p-type layer 6, and light emitting layer 5 interposed between the layers 3 and 4 and 6 are formed in the form of homojunction etc., by using a group III nitride semiconductor. A first electrode 7 and second electrode 8 are formed in strip-like states on the p-layer 6. The electrodes 7 and 8 are connected to lead pin lands through wedge-bonded A lead wires 21 and 22. Consequently, the electrodes 7 and 8 can be formed in minimum areas at corners on the surface of the layer 6. Therefore, the luminous intensity of a light emitting diode can be improved by reducing the shades of the electrodes 7 and 8 formed by the light emitted from the diode. |
