| 摘要 |
PURPOSE:To reduce the power consumption and to attain high processing speed by providing a discharge circuit discharging each block to each block. CONSTITUTION:MOS transistors (TRs) of each of MOS TR arrays 1-0 to 1-r are connected in series with lines L0-Ln. A precharge level is applied to one and other terminals of the lines L0-Ln and nodes 3-0 to3-(r-1) of the lines L0-Ln among the MOS TR arrays 1-0 to 1-r from precharge circuits 2-0 to 2-4 and a precharge/discharge circuit 4 in the case of precharge. The precharge/ discharge circuit 4 applies a discharge potential to the other ends of the lines L0-Ln in the discharging state. |
