THIN FILM TRANSISTOR ARRAY ELEMENT

摘要

PURPOSE:To provide a thin film transistor array element having high reliability and excellent performance capable of diminishing deterioration in the off characteristics of TFT caused by longtime driving operation. CONSTITUTION:Within the thin film transistor array element provided with a selfmatching reversed stagger structured thin film transistor forming a picture element electrode formed corresponding to respective intersections of signal lines and scanning lines of an insulating substrate as well as a gate electrode using a protective insulating film pattern of a channel part as masks, the width W1 of a semiconductor layer 3 in the path of current from a source electrode 7a of the thin film to a drain electrode 7b through a semiconductor layer 3 is made narrower than the width W2 and W3 of the source electrode 7a and the drain electrode 7b.