EXPOSURE METHOD USING ATTENUATION TYPE PHASE-SHIFT MASK

摘要

PURPOSE:To provide an exposure method using an attenuation type phase-shift mask capable of accurately exposing a specified pattern in the same process in all regions of a material to be exposed even when there is a stepped section in the material to be exposed. CONSTITUTION:The optimum value of the difference of a first distance h1 and a second distance h2 from the phase angle of exposure light transmitted through a second light transmission section 8 and a third light transmission section 10 and the hole size of the second light transmission section 8 and the third light transmission section 10. Accordingly, a resist film 14 can be exposured at the optimum place of a focus.