| 摘要 |
<p>PURPOSE:To enable forming resistance elements of a hybrid IC also on an interlayer insulating film, by a method wherein, after a first wiring layer is coated with heat-resistant resin, a viahole reaching the first wiring layer is formed, and a first insulating film composed of a compound film of a heat- resistant resin film and a tantalum film having tantalum pentaoxide on the surface is formed. CONSTITUTION:A TaN film 2, an NiCr film 3 and an Au film 4 are laminated on an insulating substrate 1. Excepting the region serving as a resistance element 5 and a wiring continuous with it, the Au film 4 and the NiCr film 3 are eliminated. Excepting the part of the TaN film 2 serving as the resistance element 5, the TaN film 2 on the insulating substrate is eliminated. By adjusting the resistance value of the resistance element 5, a first conductor layer 8 is formed. The first conductor layer 8 is coated with a polyimide layer 9, and further coated with a Ta film 18. A hole 19 is formed at a viahole forming position of the Ta film 18, and the upper part of the Ta film 18 is turned into Ta2O5 20. By using it as a mask, the polyimide layer 9 is selectively etched, and a viahole 22 reaching the first conductor layer 8 is formed. Thus a first insulating layer 23 is formed.</p> |
