| 摘要 |
<p>PURPOSE:To reduce mis-read-out caused by over erasing without lengthening a time required for erasing. CONSTITUTION:While data is read out from a flash memory selected in a flash memory cell array 20, a lower potential of -2V than a source potential of 0V of a flash memory cell M11 is applied to a control gate 14 of a non-selection flash memory cell M11. Therefore, even if a floating gate 13 is charged positive due to over erasing, a potential of the floating gate 13 is lowered, and the flash memory cell M11 is turned off.</p> |
