| 摘要 |
PURPOSE:To provide a highly reliable semiconductor light emitting element having a high luminous efficiency. CONSTITUTION:An n-AlGaln lower clad layer 2, p<->-GaInP active layer 3, p- AlGaInP upper clad layer 4, lower p-AlGaAs current diffusing layer 5, high- resistance layer 6, and upper p-AlGaAs current diffusing layer 5 are successively formed on an n-GaAs substrate 1 by growing crystals. The high-resistance layer 6 is formed by temporarily changing the dopant from Zn to Mg. Therefore, the electric current injected from a p-side electrode is sufficiently diffused in the lateral direction in cross section by the layer 6 and injected to nearly all area of the active layer 3. Since the layer 6 can be formed in a thin layer, the injected current can be increased without increasing the electrical resistance of a light emitting element. Since the layer 6 is thin, in addition, a semiconductor layer having excellent crystallinity can be formed. |
