| 发明名称 |
FILLING HOLES AND THE LIKE IN SUBSTRATES |
| 摘要 |
A method of filling holes (12) in a layer (11) on a semiconductor wafer (10) is described. An aluminium foil (13) is laid over the layer (11) to close off the holes (12). Elevated temperatures and pressures are then applied causing localised flow of aluminium into the holes. The foil (13) may be provided with a carrier layer (17) and a barrier or lubricating layer (14 to 16).
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| 申请公布号 |
CA2171092(A1) |
申请公布日期 |
1996.02.01 |
| 申请号 |
CA19952171092 |
申请日期 |
1995.07.04 |
| 申请人 |
ELECTROTECH LIMITED |
发明人 |
DOBSON, CHRISTOPHER DAVID;MCGEOWN, ARTHUR JOHN |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H05K3/40;(IPC1-7):H01L21/320;H01L23/535;H01L21/44;H01L23/50 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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