| 摘要 |
<p>A plasma processing device for performing a plasma etching, a plasma ashing, a plasma CVD, etc., of a semiconductor device substrate, a glass substrate for liquid crystal display, etc., having a large area. The plasma processing device comprises a microwave oscillator (26), a microwave waveguide (23), a microwave introducing window (4), a reaction chamber (2), etc. A dielectric layer (21) is formed on the window (4) on the opposite side to a hollow space (20). The layer (21) comprises a plurality of dielectric layers (21a and 21b) and microwave waveguides (23a and 23b) are connected to the layers (21a and 21b), respectively. Therefore, uniform plasma processing of a glass substrate for liquid crystal display, etc., having a large area with a simple constitution is stably performed.</p> |
