| 摘要 |
<p>A method of filling holes (12) in a layer (11) on a semiconductor wafer (10) is described. An aluminium foil (13) is laid over the layer (11) to close off the holes (12). Elevated temperatures and pressures are then applied causing localised flow of aluminium into the holes. The foil (13) may be provided with a carrier layer (17) and a barrier or lubricating layer (14 to 16).</p> |
